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	First-principle study of the native defects in GaAs saturable absorbers
	Tang, Wenjing; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian
刊名	MOLECULAR SIMULATION
	2010
卷号	36期号:14页码:1141-1147
关键词	EL2 defect formation energy defect energy level density of states elastic properties
DOI	10.1080/08927022.2010.506514
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5486657
专题	山东大学
作者单位	Shandong Univ, Sch Informat Sci & Technol, Jinan 250100, Peoples R China.
推荐引用方式 GB/T 7714	Tang, Wenjing,Li, Dechun,Zhao, Shengzhi,et al. First-principle study of the native defects in GaAs saturable absorbers[J]. MOLECULAR SIMULATION,2010,36(14):1141-1147.
APA	Tang, Wenjing,Li, Dechun,Zhao, Shengzhi,Li, Guiqiu,&Yang, Kejian.(2010).First-principle study of the native defects in GaAs saturable absorbers.MOLECULAR SIMULATION,36(14),1141-1147.
MLA	Tang, Wenjing,et al."First-principle study of the native defects in GaAs saturable absorbers".MOLECULAR SIMULATION 36.14(2010):1141-1147.

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