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	High-performance spin rectification in gallium nitride-based molecular junctions with asymmetric edge passivation
	Chen, Tong; Guo, Chengkun; Li, Quan; Xu, Liang; Wang, Lingling; Long, Mengqiu; Shuai, Cijun
刊名	Journal of Applied Physics
	2018
卷号	Vol.124 No.21
ISSN号	1089-7550
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5470519
专题	湖南大学
作者单位	1.School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang 2.330013, China 3.Key Laboratory for Micro/Nano Physics and Technology of Hunan Province, School of Physics and Microelectronics, Hunan University, C
推荐引用方式 GB/T 7714	Chen, Tong,Guo, Chengkun,Li, Quan,et al. High-performance spin rectification in gallium nitride-based molecular junctions with asymmetric edge passivation[J]. Journal of Applied Physics,2018,Vol.124 No.21.
APA	Chen, Tong.,Guo, Chengkun.,Li, Quan.,Xu, Liang.,Wang, Lingling.,...&Shuai, Cijun.(2018).High-performance spin rectification in gallium nitride-based molecular junctions with asymmetric edge passivation.Journal of Applied Physics,Vol.124 No.21.
MLA	Chen, Tong,et al."High-performance spin rectification in gallium nitride-based molecular junctions with asymmetric edge passivation".Journal of Applied Physics Vol.124 No.21(2018).

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