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	Erratum to: Metal-insulator transition of Ge-Sb-Te superlattice: An electron counting model study 17:1 DOI: 10.1109/TNANO.2017.2779579)
	Chen, Nian-Ke; Li, Xian-Bin; Wang, Xue-Peng; Xie, Sheng-Yi; Tian, Wei Quan; Zhang, Shengbai; Sun, Hong-Bo
刊名	IEEE Transactions on Nanotechnology
	2018
卷号	Vol.17 No.3
ISSN号	1536-125X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5469058
专题	湖南大学
作者单位	1.) State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 2.130012, China 3.School of Physics and Electronics, Hunan University, Changsha 4.410082, China 5.College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 6.401331, China 7.Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy 8.NY 9.12180, United States 10.Department of Precision Instrument, Tsinghua University, Beijing
推荐引用方式 GB/T 7714	Chen, Nian-Ke,Li, Xian-Bin,Wang, Xue-Peng,et al. Erratum to: Metal-insulator transition of Ge-Sb-Te superlattice: An electron counting model study 17:1 DOI: 10.1109/TNANO.2017.2779579)[J]. IEEE Transactions on Nanotechnology,2018,Vol.17 No.3.
APA	Chen, Nian-Ke.,Li, Xian-Bin.,Wang, Xue-Peng.,Xie, Sheng-Yi.,Tian, Wei Quan.,...&Sun, Hong-Bo.(2018).Erratum to: Metal-insulator transition of Ge-Sb-Te superlattice: An electron counting model study 17:1 DOI: 10.1109/TNANO.2017.2779579).IEEE Transactions on Nanotechnology,Vol.17 No.3.
MLA	Chen, Nian-Ke,et al."Erratum to: Metal-insulator transition of Ge-Sb-Te superlattice: An electron counting model study 17:1 DOI: 10.1109/TNANO.2017.2779579)".IEEE Transactions on Nanotechnology Vol.17 No.3(2018).

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