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	Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study
	Nian-Ke Chen; Xian-Bin Li; Xue-Peng Wang; Sheng-Yi Xie; Wei Quan Tian; Shengbai Zhang; Hong-Bo Sun
刊名	IEEE Transactions on Nanotechnology
	2018
卷号	Vol.17 No.1页码:140-146
关键词	Chemicals Photonic band gap Energy barrier Semiconductor device modeling Atomic layer deposition Phase change materials Superlattices Phase change memory metal-insulator transition first-principles calculations
ISSN号	1536-125X;1941-0085
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5466622
专题	湖南大学
作者单位	1.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, Jilin China 2.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, Jilin China 3.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, Jilin China 4.School of Physics and Electronics, Hunan University, Changsha, Hunan China 5.College of Chemistry and Chemical Engineering, Chongqing University, Chongqing, Chongqing China 6.Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 8024 Troy, New York United States 7.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, Jilin China 130012
推荐引用方式 GB/T 7714	Nian-Ke Chen,Xian-Bin Li,Xue-Peng Wang,et al. Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study[J]. IEEE Transactions on Nanotechnology,2018,Vol.17 No.1:140-146.
APA	Nian-Ke Chen.,Xian-Bin Li.,Xue-Peng Wang.,Sheng-Yi Xie.,Wei Quan Tian.,...&Hong-Bo Sun.(2018).Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study.IEEE Transactions on Nanotechnology,Vol.17 No.1,140-146.
MLA	Nian-Ke Chen,et al."Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study".IEEE Transactions on Nanotechnology Vol.17 No.1(2018):140-146.

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