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	Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure
	Yang, Hongguan
刊名	IEEE Transactions on Electron Devices
	2018
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5463463
专题	湖南大学
作者单位	School of Physics and Electronics, Hunan University, Changsha 410006, China .
推荐引用方式 GB/T 7714	Yang, Hongguan. Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure[J]. IEEE Transactions on Electron Devices,2018.
APA	Yang, Hongguan.(2018).Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure.IEEE Transactions on Electron Devices.
MLA	Yang, Hongguan."Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure".IEEE Transactions on Electron Devices (2018).

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