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	Lateral Heterostructures Formed by Thermally Converting n-Type SnSe to p-Type SnSe
	Tian, Z.; Zhao, M.; Xue, X.; Xia, W.; Guo, C.; Guo, Y.; Feng, Y.; Xue, J.
刊名	ACS Applied Materials and Interfaces
	2018
卷号	Vol.10 No.15页码:12831-12838
关键词	2D materials atomically sharp interfaces in-plane p-n junction SnSe SnSe2 STM
ISSN号	1944-8244
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5463025
专题	湖南大学
作者单位	1.a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai, China 3.School of Physics and Electronics, Hunan University, Changsha, China 4.University of Chinese Academy of Sciences, Beijing, China 5.Center for Excellence in Superconducting Electronics , Chinese Academy of Sciences, Shanghai, China
推荐引用方式 GB/T 7714	Tian, Z.,Zhao, M.,Xue, X.,et al. Lateral Heterostructures Formed by Thermally Converting n-Type SnSe to p-Type SnSe[J]. ACS Applied Materials and Interfaces,2018,Vol.10 No.15:12831-12838.
APA	Tian, Z..,Zhao, M..,Xue, X..,Xia, W..,Guo, C..,...&Xue, J..(2018).Lateral Heterostructures Formed by Thermally Converting n-Type SnSe to p-Type SnSe.ACS Applied Materials and Interfaces,Vol.10 No.15,12831-12838.
MLA	Tian, Z.,et al."Lateral Heterostructures Formed by Thermally Converting n-Type SnSe to p-Type SnSe".ACS Applied Materials and Interfaces Vol.10 No.15(2018):12831-12838.

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