Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices | |
Quantan Wu; Writam Banerjee; Jingchen Cao; Zhuoyu Ji; Ling Li; Ming Liu | |
会议名称 | APPLIED PHYSICS LETTERS |
会议日期 | 2018 |
会议录 | Vol.113 No.2
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URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5452054 |
专题 | 湖南大学 |
推荐引用方式 GB/T 7714 | Quantan Wu,Writam Banerjee,Jingchen Cao,et al. Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices[C]. 见:APPLIED PHYSICS LETTERS. 2018. |
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