| n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces | |
| Guo, Ying; Pan, Feng; Ren, Yajie; Yao, Binbin; Yang, Chuanghua; Ye, Meng; Wang, Yangyang; Li, Jingzhen; Zhang, Xiuying; Yan, Jiahuan | |
| 会议名称 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS |
| 会议日期 | 2018 |
| 会议地点 | 24239-24249 |
| 会议录 | Vol.20 No.37
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5451748 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Shaanxi Univ Technol, Sch Phys & Telecommun Engn, Shaanxi Key Lab Catalysis, Hanzhong 723001, Peoples R China 2.Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 4.China Acad Space Technol, Nanophoton & Optoelect Res Ctr, Qian Xuesen Lab Space Technol, Beijing 100094, Peoples R China 5.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Ying,Pan, Feng,Ren, Yajie,et al. n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces[C]. 见:PHYSICAL CHEMISTRY CHEMICAL PHYSICS. 24239-24249. 2018. |
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