Efficient 1.06 mu m laser operation in an unprocessed Nd3+:BaGd2(MoO4)(4) cleavage microchip

	Efficient 1.06 mu m laser operation in an unprocessed Nd3+:BaGd2(MoO4)(4) cleavage microchip
	H. M. Zhu ; Y. J. Chen ; Y. F. Lin ; X. H. Gong ; Z. D. Luo and Y. D. Huang
刊名	Applied Physics B-Lasers and Optics
	2008-11
卷号	93 期号:2-3 页码:429-432
关键词	continuous-wave crystal array
ISSN号	0946-2171
收录类别	SCI
原文出处	http://download.springer.com/static/pdf/612/art%253A10.1007%252Fs00340-008-3196-y.pdf?auth66=1355300247_a6ff3dff33e9ed473ab864e1bc9afe35&ext=.pdf
语种	英语
公开日期	2013-01-22
内容类型	期刊论文
源URL	[http://ir.fjirsm.ac.cn/handle/350002/6077]
专题	福建物质结构研究所_中科院福建物质结构研究所_期刊论文
推荐引用方式 GB/T 7714	H. M. Zhu,Y. J. Chen,Y. F. Lin,et al. Efficient 1.06 mu m laser operation in an unprocessed Nd3+:BaGd2(MoO4)(4) cleavage microchip[J]. Applied Physics B-Lasers and Optics,2008,93(2-3):429-432.
APA	H. M. Zhu,Y. J. Chen,Y. F. Lin,X. H. Gong,&Z. D. Luo and Y. D. Huang.(2008).Efficient 1.06 mu m laser operation in an unprocessed Nd3+:BaGd2(MoO4)(4) cleavage microchip.Applied Physics B-Lasers and Optics,93(2-3),429-432.
MLA	H. M. Zhu,et al."Efficient 1.06 mu m laser operation in an unprocessed Nd3+:BaGd2(MoO4)(4) cleavage microchip".Applied Physics B-Lasers and Optics 93.2-3(2008):429-432.