Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) | |
S.M. Zhang(张书明); Y.M. Fan(范亚明); B.S. Zhang(张宝顺); H. Yang(杨辉) | |
刊名 | Journal of Crystal Growth |
2012 | |
卷号 | 348期号:1页码:25-30 |
关键词 | Diffusion Metalorganic chemical vapor deposition Nitrides Semiconducting quaternary alloys |
通讯作者 | J.J. Zhu(朱建军) |
英文摘要 | A large amount of Ga atoms, sometimes nominally as high as 45% of the total group III constituents, was found in the AlInN films prepared by metalorganic chemical vapor deposition (MOCVD) under an In-very-rich environment, even when no Ga precursor was introduced. GaN template has been found to be the main source supplying most of the unexpected Ga atoms during epitaxial growth, of which about 2% might be contributed from other residual Ga-contained sources in the reactor. Secondary ion mass spectroscopy (SIMS) profile measurement shows that atom interdiffusion between In, Al, and Ga atoms is the main path of the high percentage of unexpected Ga atoms incorporating into the AlInN epilayers. A high growth temperature and the H2 added in carrier gas may enhance the Ga atom incorporation into AlIn(Ga)N epilayer by promoting decomposition of GaN template and increasing atom diffusing ability. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000303937900006 |
公开日期 | 2013-01-22 |
内容类型 | 期刊论文 |
源URL | [http://58.210.77.100/handle/332007/995] |
专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
推荐引用方式 GB/T 7714 | S.M. Zhang,Y.M. Fan,B.S. Zhang,et al. Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)[J]. Journal of Crystal Growth,2012,348(1):25-30. |
APA | S.M. Zhang,Y.M. Fan,B.S. Zhang,&H. Yang.(2012).Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD).Journal of Crystal Growth,348(1),25-30. |
MLA | S.M. Zhang,et al."Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)".Journal of Crystal Growth 348.1(2012):25-30. |
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