Distribution of electric field and design of devices in GaN avalanche photodiodes | |
Baoshun Zhang (张宝顺); ShuMing Zhang; Hui Yang (杨辉) | |
刊名 | Science China-Physics Mechanics & Astronomy |
2012-04 | |
卷号 | 55期号:4页码:619-624 |
关键词 | GaN avalanche photodiodes distribution of electric field |
英文摘要 | We have investigated the distribution of the electric field in p-i-n type and separate absorption and multiplication (SAM) type GaN avalanche photodiodes under different reverse bias values. We have also analyzed the influences of the parameters of each layer, including width and concentration, on the distribution of the electric field, especially on the breakdown voltage. It is found that a relatively high concentration of p-GaN (higher than 1×1018 cm−3) and low carrier concentration of i-GaN (lower than 5×1016 cm−3) are helpful to restrict the electric field and reduce the breakdown voltage. In a SAM (p-i-n-i-n) structure, a suitable choice should be made for the concentration and thickness of the intermediate n-GaN layer in order to decrease breakdown voltage and prevent the device from degenerating into a p-i-n structure. Finally, the optimized material parameters of each layer are proposed. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000301849800010 |
公开日期 | 2013-01-22 |
内容类型 | 期刊论文 |
源URL | [http://ir.sinano.ac.cn/handle/332007/972] |
专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
推荐引用方式 GB/T 7714 | Baoshun Zhang ,ShuMing Zhang,Hui Yang . Distribution of electric field and design of devices in GaN avalanche photodiodes[J]. Science China-Physics Mechanics & Astronomy,2012,55(4):619-624. |
APA | Baoshun Zhang ,ShuMing Zhang,&Hui Yang .(2012).Distribution of electric field and design of devices in GaN avalanche photodiodes.Science China-Physics Mechanics & Astronomy,55(4),619-624. |
MLA | Baoshun Zhang ,et al."Distribution of electric field and design of devices in GaN avalanche photodiodes".Science China-Physics Mechanics & Astronomy 55.4(2012):619-624. |
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