EL2 deep level defects and above-band gap two-photon absorption in high gain lateral semi-insulating GaAs photoconductive switch | |
Shi, W; Wang, W; Niu, HJ; Zhang, XB; Ji, WL | |
2005 | |
会议名称 | Conference on Advanced Materials and Devices for Sensing and Imaging II |
会议日期 | 2004-11-08 |
会议地点 | Beijing, PEOPLES R CHINA |
关键词 | photoconductive switch semi-insulating GaAs EL2 deep level two-photon |
页码 | 585-589 |
会议录 | Advanced Materials and Devices for Sensing and Ima
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URL标识 | 查看原文 |
WOS记录号 | WOS:000228331600080 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5436653 |
专题 | 西安理工大学 |
推荐引用方式 GB/T 7714 | Shi, W,Wang, W,Niu, HJ,et al. EL2 deep level defects and above-band gap two-photon absorption in high gain lateral semi-insulating GaAs photoconductive switch[C]. 见:Conference on Advanced Materials and Devices for Sensing and Imaging II. Beijing, PEOPLES R CHINA. 2004-11-08. |
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