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	High Performance Field-Effect Transistor Based on Multi layer Tungsten Disulfide
	Liu, Xue[1]; Hu, Jin[2]; Yue, Chunlei[3]; Della Fera, Nicholas[4]; Ling, Yun[5]; Mao, Zhiqiang[6]; Wei, Jiang[7]
刊名	ACS NANO
	2014
卷号	8期号:10页码:10396-10402
关键词	transition metal chalcogenide two-dimensional field-effect transistor tungsten disulfide WS2
ISSN号	1936-0851
DOI	http://dx.doi.org/10.1021/nn505253p
URL标识	查看原文
收录类别	SCI(E) ; EI
WOS记录号	WOS:000343952600074
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5395707
专题	江苏大学
作者单位	[1]Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, United States [2]Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, United States [3]Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, United States [4]Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, United States [5]School of Materials Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu, China |College of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou, Jiangsu, China[6]Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, United States [7]Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, United States
推荐引用方式 GB/T 7714	Liu, Xue[1],Hu, Jin[2],Yue, Chunlei[3],et al. High Performance Field-Effect Transistor Based on Multi layer Tungsten Disulfide[J]. ACS NANO,2014,8(10):10396-10402.
APA	Liu, Xue[1].,Hu, Jin[2].,Yue, Chunlei[3].,Della Fera, Nicholas[4].,Ling, Yun[5].,...&Wei, Jiang[7].(2014).High Performance Field-Effect Transistor Based on Multi layer Tungsten Disulfide.ACS NANO,8(10),10396-10402.
MLA	Liu, Xue[1],et al."High Performance Field-Effect Transistor Based on Multi layer Tungsten Disulfide".ACS NANO 8.10(2014):10396-10402.

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