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	Indium-zinc-oxide electric-double-layer thin-film transistors gated by silane coupling agents 3-triethoxysilylpropylamine-graphene oxide solid electrolyte
	Guo, Liqiang[1]; Huang, Yukai[2]; Shi, Yangyang[3]; Cheng, Guanggui[4]; Ding, Jianning[5]
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2015
卷号	48期号:28
关键词	KH550-GO solid electrolyte electric-double-layer proton conductor electrolyte
ISSN号	0022-3727
DOI	http://dx.doi.org/10.1088/0022-3727/48/28/285103
URL标识	查看原文
收录类别	SCI(E) ; EI
WOS记录号	WOS:000356626500005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5394136
专题	江苏大学
作者单位	[1]Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang, 212013, China[2]Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang, 212013, China[3]Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang, 212013, China[4]Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang, 212013, China[5]Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang, 212013, China
推荐引用方式 GB/T 7714	Guo, Liqiang[1],Huang, Yukai[2],Shi, Yangyang[3],et al. Indium-zinc-oxide electric-double-layer thin-film transistors gated by silane coupling agents 3-triethoxysilylpropylamine-graphene oxide solid electrolyte[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2015,48(28).
APA	Guo, Liqiang[1],Huang, Yukai[2],Shi, Yangyang[3],Cheng, Guanggui[4],&Ding, Jianning[5].(2015).Indium-zinc-oxide electric-double-layer thin-film transistors gated by silane coupling agents 3-triethoxysilylpropylamine-graphene oxide solid electrolyte.JOURNAL OF PHYSICS D-APPLIED PHYSICS,48(28).
MLA	Guo, Liqiang[1],et al."Indium-zinc-oxide electric-double-layer thin-film transistors gated by silane coupling agents 3-triethoxysilylpropylamine-graphene oxide solid electrolyte".JOURNAL OF PHYSICS D-APPLIED PHYSICS 48.28(2015).

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