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	The effects of surface group functionalization and strain on the electronic structures of two-dimensional silicon carbide
	Zhang, Peng[1]; Hou, Xiuli[2]; He, Yanqiong[3]; Peng, Qiuming[4]; Dong, Mingdong[5]
刊名	CHEMICAL PHYSICS LETTERS
	2015
卷号	628页码:60-65
ISSN号	0009-2614
DOI	http://dx.doi.org/10.1016/j.cplett.2015.03.031
URL标识	查看原文
收录类别	SCI(E) ; EI
WOS记录号	WOS:000353975300011
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5376708
专题	江苏大学
作者单位	[1]Institute for Advanced Materials, School of Materials Science and Engineering, Jiangsu University, Zhenjiang, China |Center for DNA Nanotechnology , Interdisciplinary Nanoscience Center , Aarhus University, Aarhus, Denmark [2]Institute for Advanced Materials, School of Materials Science and Engineering, Jiangsu University, Zhenjiang, China [3]Institute for Advanced Materials, School of Materials Science and Engineering, Jiangsu University, Zhenjiang, China [4]State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, China[5]Center for DNA Nanotechnology , Interdisciplinary Nanoscience Center , Aarhus University, Aarhus, Denmark
推荐引用方式 GB/T 7714	Zhang, Peng[1],Hou, Xiuli[2],He, Yanqiong[3],et al. The effects of surface group functionalization and strain on the electronic structures of two-dimensional silicon carbide[J]. CHEMICAL PHYSICS LETTERS,2015,628:60-65.
APA	Zhang, Peng[1],Hou, Xiuli[2],He, Yanqiong[3],Peng, Qiuming[4],&Dong, Mingdong[5].(2015).The effects of surface group functionalization and strain on the electronic structures of two-dimensional silicon carbide.CHEMICAL PHYSICS LETTERS,628,60-65.
MLA	Zhang, Peng[1],et al."The effects of surface group functionalization and strain on the electronic structures of two-dimensional silicon carbide".CHEMICAL PHYSICS LETTERS 628(2015):60-65.

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