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	A simple method to control nanotribology behaviors of monocrystalline silicon
	Wang, X.D.[1]; Guo, J.[2]; Chen, C.[3]; Chen, L.[4]; Qian, L.M.[5]
刊名	JOURNAL OF APPLIED PHYSICS
	2016
卷号	119期号:4
ISSN号	0021-8979
DOI	http://dx.doi.org/10.1063/1.4940882
URL标识	查看原文
收录类别	SCI(E) ; EI
WOS记录号	WOS:000369896300018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5375466
专题	江苏大学
作者单位	[1]Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu, China |Center of Micro/Nano Science and Technology, Jiangsu University, Zhenjiang, China[2]Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu, China [3]Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu, China [4]Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu, China [5]Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu, China
推荐引用方式 GB/T 7714	Wang, X.D.[1],Guo, J.[2],Chen, C.[3],et al. A simple method to control nanotribology behaviors of monocrystalline silicon[J]. JOURNAL OF APPLIED PHYSICS,2016,119(4).
APA	Wang, X.D.[1],Guo, J.[2],Chen, C.[3],Chen, L.[4],&Qian, L.M.[5].(2016).A simple method to control nanotribology behaviors of monocrystalline silicon.JOURNAL OF APPLIED PHYSICS,119(4).
MLA	Wang, X.D.[1],et al."A simple method to control nanotribology behaviors of monocrystalline silicon".JOURNAL OF APPLIED PHYSICS 119.4(2016).

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