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	Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte
	Guo, Liqiang[1]; Wen, Juan[2]; Ding, Jianning[3]; Wan, Changjin[4]; Cheng, Guanggui[5]
刊名	SCIENTIFIC REPORTS
	2016
卷号	6页码:38578
ISSN号	2045-2322
DOI	http://dx.doi.org/10.1038/srep38578
URL标识	查看原文
收录类别	SCI(E) ; PUBMED
WOS记录号	WOS:000389528000001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5364790
专题	江苏大学
作者单位	1.[1]Jiangsu Univ, Micro Nano Sci & Technol Ctr, Zhenjiang 212013, Peoples R China. 2.Changzhou Univ, Breeding Construct Point State Key Lab Photovolat, Jiangsu Collaborat Innovat Ctr Photovolat Sci &, Changzhou 213164, Peoples R China. 3.[2]Jiangsu Univ, Micro Nano Sci & Technol Ctr, Zhenjiang 212013, Peoples R China. 4.[3]Jiangsu Univ, Micro Nano Sci & Technol Ctr, Zhenjiang 212013, Peoples R China. 5.Changzhou Univ, Breeding Construct Point State Key Lab Photovolat, Jiangsu Collaborat Innovat Ctr Photovolat Sci &, Changzhou 213164, Peoples R China. 6.[4]Chinese Acad Sci, Ningbo Inst Mat Technol Engn, Ningbo 315201, Zhejiang, Peoples R China. 7.[5]Jiangsu Univ, Micro Nano Sci & Technol Ctr, Zhenjiang 212013, Peoples R China.
推荐引用方式 GB/T 7714	Guo, Liqiang[1],Wen, Juan[2],Ding, Jianning[3],et al. Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte[J]. SCIENTIFIC REPORTS,2016,6:38578.
APA	Guo, Liqiang[1],Wen, Juan[2],Ding, Jianning[3],Wan, Changjin[4],&Cheng, Guanggui[5].(2016).Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte.SCIENTIFIC REPORTS,6,38578.
MLA	Guo, Liqiang[1],et al."Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte".SCIENTIFIC REPORTS 6(2016):38578.

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