Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography

	Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography
	Wei TB; Wu K; Lan D(蓝鼎); Yan QF; Chen Y; Du CX; Wang JX; Zeng YP; Li JM
刊名	APPLIED PHYSICS LETTERS
	2012-11-19
通讯作者邮箱	tbwei@semi.ac.cn
卷号	101 期号:21 页码:211111/1-211111/5
关键词	Light Extraction Arrays Output
ISSN号	0003-6951
通讯作者	Wei, TB ; Chinese Acad Sci, State Key Lab Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China.
产权排序	[Wei, Tongbo;Wu, Kui; Chen, Yu; Du, Chengxiao; Wang, Junxi; Zeng, Yiping; Li, Jinmin] Chinese Acad Sci, State Key Lab Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China; [Lan, Ding] Chinese Acad Sci, Natl Micrograv Lab, Inst Mech, Beijing 100083, Peoples R China; [Yan, Qingfeng] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
合作状况	国内
中文摘要	We report a low-cost and high-throughput process for the fabrication of two-dimensional SiO2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light extraction of GaN-based light-emitting diodes (LEDs). The PhC structures were realized by the selective area growth of p-GaN using SiO2 nanodisks, which were patterned utilizing a self-assembled nanosphere as an optical lens. Without prejudice to the electrical properties of LEDs, the light output power (at 350 mA) of LEDs with the SiO2 and corresponding air-hole PhC was enhanced by 71.3% and 49.3%, respectively, compared to that without PhC. The LEDs with selectively grown PhC structures were found to exhibit partial compression strain release and reduced emission divergence. The finite-difference time-domain simulation was also performed to further reveal the emission characteristics of PhC LEDs.
学科主题	固体力学
分类号	一类
收录类别	SCI ; EI
资助信息	This work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61274040 and 61274008, by the National Basic Research Program of China under Grant No. 2011CB301902, and by the National High Technology Program of China under Grant No. 2011AA03A103.
原文出处	http://dx.doi.org/10.1063/1.4767334
语种	英语
WOS记录号	WOS:000311477600011
公开日期	2013-01-18
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/46599]
专题	力学研究所_国家微重力实验室
推荐引用方式 GB/T 7714	Wei TB,Wu K,Lan D,et al. Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography[J]. APPLIED PHYSICS LETTERS,2012,101(21):211111/1-211111/5.
APA	Wei TB.,Wu K.,Lan D.,Yan QF.,Chen Y.,...&Li JM.(2012).Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography.APPLIED PHYSICS LETTERS,101(21),211111/1-211111/5.
MLA	Wei TB,et al."Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography".APPLIED PHYSICS LETTERS 101.21(2012):211111/1-211111/5.