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	Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors
	Yang, Qizhi[1]; Fang, Jiajia[2]; Zhang, Guangru[3]; Wang, Quan[4]
刊名	PHYSICS LETTERS A
	2018
卷号	382期号:10页码:697-703
关键词	MoS2 CVD Field-effect transistor Electronic properties Hysteresis
ISSN号	0375-9601
DOI	http://dx.doi.org/10.1016/j.physleta.2017.12.052
URL标识	查看原文
收录类别	SCI(E)
WOS记录号	WOS:000424961100004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5338598
专题	江苏大学
作者单位	1.[1]Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China. 2.[2]Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China. 3.[3]Nanjing Tech Univ, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Jiangsu, Peoples R China. 4.[4]Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China. 5.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Qizhi[1],Fang, Jiajia[2],Zhang, Guangru[3],et al. Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors[J]. PHYSICS LETTERS A,2018,382(10):697-703.
APA	Yang, Qizhi[1],Fang, Jiajia[2],Zhang, Guangru[3],&Wang, Quan[4].(2018).Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors.PHYSICS LETTERS A,382(10),697-703.
MLA	Yang, Qizhi[1],et al."Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors".PHYSICS LETTERS A 382.10(2018):697-703.

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