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	Ohmic contacts for p-type wide bandgap II-VI semiconductor materials
	AHLGREN, WILLIAM L.
	2001-07-24
著作权人	RAYTHEON COMPANY
专利号	US6265731
国家	美国
文献子类	授权发明
其他题名	Ohmic contacts for p-type wide bandgap II-VI semiconductor materials
英文摘要	A semiconductor device comprises an active element and contacts that permit low-resistance external electrical connections. The active element includes an active layer formed from group II-VI elements, an n-doped layer on one side of the active it layer, and a p-doped layer on the other side of the active layer. The p-doped layer is a ZnSe-based alloy or a ZnTe-based alloy. There are electrical contacts to the n-doped layer and to the p-doped layer. The electrical contact to the p-doped layer includes a graded-alloy contact layer in epitaxial contact with the p-doped layer and whose bandgap varies from about that of the p-doped layer adjacent the p-doped layer to about zero at a location remote from the p-doped layer. The graded-alloy contact layer is a HgZnSSe-based graded-composition alloy where the p-doped layer is a ZnSe-based alloy, or a HgZnSeTe-based graded-composition alloy where the p-doped layer is a ZnTe-based alloy.
公开日期	2001-07-24
申请日期	1992-06-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42380]
专题	半导体激光器专利数据库
作者单位	RAYTHEON COMPANY
推荐引用方式 GB/T 7714	AHLGREN, WILLIAM L.. Ohmic contacts for p-type wide bandgap II-VI semiconductor materials. US6265731. 2001-07-24.

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