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	Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
	ISHIBASHI, AKIRA; TANIGUCHI, SATOSHI; HINO, TOMONORI; KOBAYASHI, TAKASHI; NAKANO, KAZUSHI; NAKAYAMA, NORIKAZU
	1999-04-27
著作权人	SONY CORPORATION
专利号	US5898662
国家	美国
文献子类	授权发明
其他题名	Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
英文摘要	A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.
公开日期	1999-04-27
申请日期	1997-11-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42327]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	ISHIBASHI, AKIRA,TANIGUCHI, SATOSHI,HINO, TOMONORI,et al. Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus. US5898662. 1999-04-27.

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