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	Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device
	NAKANISHI, KENJI; KITAGAWA, MASAHIKO; TOMOMURA, YOSHITAKA; HIRATA, SHINYA
	1996-04-16
著作权人	SHARP KABUSHIKI KAISHA
专利号	US5508522
国家	美国
文献子类	授权发明
其他题名	Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device
英文摘要	A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.
公开日期	1996-04-16
申请日期	1993-12-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42294]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NAKANISHI, KENJI,KITAGAWA, MASAHIKO,TOMOMURA, YOSHITAKA,et al. Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device. US5508522. 1996-04-16.

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