| Method for fabricating DH lasers | |
| HSIEH, JAW J. | |
| 1983-02-08 | |
| 著作权人 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
| 专利号 | US4372791 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating DH lasers |
| 英文摘要 | Double-heterostructure (DH) diode lasers based upon very thin epitaxial layers of GaxIn1-xAsyP1-y grown on and lattice-matched to oriented InP substrates are disclosed. A preferred method for fabricating such lasers involves the successive growth, on an InP substrate, of an InP buffer layer, the GaInAsP active layer and an InP top barrier layer using liquid phase epitaxy techniques to grow these layers from supercooled solutions. Stripe geometry lasers can be fabricated from these materials which emit in the 1-3 mu m range and are capable of cw operation for extended periods at room temperature. |
| 公开日期 | 1983-02-08 |
| 申请日期 | 1981-08-28 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42248]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | HSIEH, JAW J.. Method for fabricating DH lasers. US4372791. 1983-02-08. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论