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	Semiconductor laser device and manufacturing method therefor
	KINEI, SATOFUMI; HASHIMOTO, TAKAHIRO
	2005-03-08
著作权人	SHARP KABUSHIKI KAISHA
专利号	US6865206
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device and manufacturing method therefor
英文摘要	There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750° C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700° C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650° C.
公开日期	2005-03-08
申请日期	2002-07-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42200]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KINEI, SATOFUMI,HASHIMOTO, TAKAHIRO. Semiconductor laser device and manufacturing method therefor. US6865206. 2005-03-08.

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