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	Semiconductor Device and Method of Making Same
	-
	1969-11-26
著作权人	RADIO CORPORATION OF AMERICA
专利号	GB1172321A
国家	英国
文献子类	授权发明
其他题名	Semiconductor Device and Method of Making Same
英文摘要	1,172,32 Electroluminescence. RADIO CORPORATION OF AMERICA. 7 April, 1967 [25 April, 1966], No. 16161/67. Heading C4S. [Also in Divisions C1 and H1] An intrinsic or extrinsic gallium arsenide substrate with (100) or (111) major faces is lapped with alumina or silicon carbide particles, polished with sodium hypochlorite and a silk cloth, and etched before being clamped in a graphite boat in a quartz furnace tube. The tube is subjected to a non-oxidizing atmosphere of one or more of hydrogen, helium, and nitrogen while a solution in gallium of gallium arsenide and tellurium is placed in contact with the free face of the substrate at a solution temperature of 880-920 C. The solution first dissolves gallium arsenide from the wafer but as it cools deposits an epitaxial layer of gallium arsenide doped with Ca. 4 x 1018 atom. cm.-3 of tellurium. The solution is removed when it has cooled to about 400 C. After the surface of the epitaxial layer has been wiped, washed in boiling concentrated hydrochloric acid, lapped, polished and etched the wafer is replaced in the boat and a P-type epitaxial layer deposited using a solution in gallium of gallium arsenide and zinc applied at an initial temperature of 910-950 C. and removed at about 400 C. After further lapping, polishing and etching the structure may be subjected to a heat treatment at 900- 975 C. to diffuse zinc from the second epitaxial layer into the first to shift the location of the PN-junction. After removal (by lapping) of the substrate wafer (if this is not of high conductivity N-type material) an evaporated tin layer is applied to the surface of the N-type layer (with a substrate temperature of 550 C.) and coatings of nickel and gold then applied by electrodeless deposition to the surfaces of both layers. In a laser, parallel faces 10-50 mils. apart may be obtained by cleavage at (110) planes, the perpendicular sides (3-5 mils. apart) being sawn and roughened to prevent reflection. The diode emits light at Ca. 8,500 and may be operated at liquid nitrogen temperature or at room temperature. Reference has been directed by the Comptroller to Specification 1,021,783.
公开日期	1969-11-26
申请日期	1967-04-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42173]
专题	半导体激光器专利数据库
作者单位	RADIO CORPORATION OF AMERICA
推荐引用方式 GB/T 7714	-. Semiconductor Device and Method of Making Same. GB1172321A. 1969-11-26.

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