Method of manufacturing semiconductor optical devices
CHO, SI HYUNG; DAUTREMONT-SMITH, WILLIAM CROSSLEY; HUANG, SUN-YUAN; JOYNER, CHARLES H; LEIBENGUTH, RONALD EUGENE; OUGAZZADEN, ABDALLAH; REYNOLDS, JR., CLAUDE LEWIS
2003-10-21
著作权人AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORP.
专利号US6635502
国家美国
文献子类授权发明
其他题名Method of manufacturing semiconductor optical devices
英文摘要The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.
公开日期2003-10-21
申请日期2000-12-20
状态授权
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/42147]  
专题半导体激光器专利数据库
作者单位AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORP.
推荐引用方式
GB/T 7714
CHO, SI HYUNG,DAUTREMONT-SMITH, WILLIAM CROSSLEY,HUANG, SUN-YUAN,et al. Method of manufacturing semiconductor optical devices. US6635502. 2003-10-21.
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