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	Electrically pumped Group IV semiconductor micro-ring laser
	SOREF, RICHARD A.; EMELETT, STEPHEN J.
	2008-06-24
著作权人	AIR FORCE, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE
专利号	US7391801
国家	美国
文献子类	授权发明
其他题名	Electrically pumped Group IV semiconductor micro-ring laser
英文摘要	An electrically pumped semiconductor laser is provided as including a waveguide structure disposed on the substrate. An optical coupling layer is disposed on the substrate and the waveguide. A resonator layer is disposed on the optical coupling layer and may be adapted to include a photonic crystal lattice having a plurality of substantially cylindrical pores extending downwardly into the resonator layer. An insulating cap layer may be disposed on the resonator layer which operatives to seal the photonic crystal lattice. A first plug filled vias is formed on a central region of the cap layer, which extends downwardly to permit a bottom portion of the first plug to communicate with the photonic crystal lattice. Further, a second plug filled vias is formed on an edge region of the cap layer and extends downwardly to permit a bottom portion of the second plug to communicate with the photonic crystal lattice.
公开日期	2008-06-24
申请日期	2005-11-25
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42126]
专题	半导体激光器专利数据库
作者单位	AIR FORCE, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE
推荐引用方式 GB/T 7714	SOREF, RICHARD A.,EMELETT, STEPHEN J.. Electrically pumped Group IV semiconductor micro-ring laser. US7391801. 2008-06-24.

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