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	Method of manufacturing wafer bonded semiconductor laser device
	IWAI, NORIHIRO; KASUKAWA, AKIHIKO
	1998-12-29
著作权人	FURUKAWA ELECTRIC CO., LTD., THE
专利号	US5854090
国家	美国
文献子类	授权发明
其他题名	Method of manufacturing wafer bonded semiconductor laser device
英文摘要	This invention gives birth to a semiconductor laser device which is equipped with a semiconductor substrate, a laser active layer with a first bandgap energy overlying the preceding semiconductor substrate, and a p-type cladding layer and an n-type cladding layer between which the preceding active layer is interposed. In addition, the referenced p-type cladding layer has a second bandgap energy exceeding 35 eV and remaining greater than the first bandgap energy. Direct bonding technique is adopted for fabricating the semiconductor laser device in question in place of epitaxial growth technique, because the cladding layer and active layer differ in lattice constant.
公开日期	1998-12-29
申请日期	1996-12-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42115]
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO., LTD., THE
推荐引用方式 GB/T 7714	IWAI, NORIHIRO,KASUKAWA, AKIHIKO. Method of manufacturing wafer bonded semiconductor laser device. US5854090. 1998-12-29.

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