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	光集積回路素子の製造方法
	浜田 健; 渋谷 隆夫; 和田 優; 清水 裕一; 伊藤 国雄; 寺本 巌
	1994-04-27
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1994032329B2
国家	日本
文献子类	授权发明
其他题名	光集積回路素子の製造方法
英文摘要	PURPOSE:To prevent the decrease of reflectance and efficiency by a method wherein one side surface of a groove is formed into the cavity surface of a laser by etching through a photo mask provided on an addition layer located at part of the grown surface, and the laser end surface is made vertical. CONSTITUTION:An N type GaAlAs clad layer 2, a non-doped GaAlAs layer 4, and a P type GaAs contact layer 5 are successively formed on an N type (100) GaAs substrate 1, and a non-doped GaAlAs cap layer 10 is additionally formed at part of the surface. A photo mask 6 having an edge parallel with the mask on the layer 10 is formed on the layer 5, and a groove reaching the substrate 1 is formed by chemical etching through both the masks 6. At this time, the side wall of the groove on the layer 10 side becomes vertical by the difference in etching speed between the layers 10 and 5, and the other wall inclines; therefore, the vertical wall is made as the cavity surface of the laser, and the other as the photo receiving surface of the light emitting element.
公开日期	1994-04-27
申请日期	1984-08-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42103]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	浜田 健,渋谷 隆夫,和田 優,等. 光集積回路素子の製造方法. JP1994032329B2. 1994-04-27.

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