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	Method of manufacturing semiconductor laser device structure
	LIN, HUNG-CHENG; CHYI, JEN-INN; CHEN, GUAN-TING
	2008-11-04
著作权人	NATIONAL CENTRAL UNIVERSITY
专利号	US7445949
国家	美国
文献子类	授权发明
其他题名	Method of manufacturing semiconductor laser device structure
英文摘要	A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.
公开日期	2008-11-04
申请日期	2004-08-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42075]
专题	半导体激光器专利数据库
作者单位	NATIONAL CENTRAL UNIVERSITY
推荐引用方式 GB/T 7714	LIN, HUNG-CHENG,CHYI, JEN-INN,CHEN, GUAN-TING. Method of manufacturing semiconductor laser device structure. US7445949. 2008-11-04.

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