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	Semiconductor laser and method of producing the semiconductor laser
	AKIHIRO SHIMA
	1997-06-04
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	GB2280311B
国家	英国
文献子类	授权发明
其他题名	Semiconductor laser and method of producing the semiconductor laser
英文摘要	The laser includes a semiconductor substrate 1, a cladding layer 2 grown on the substrate, a GaInP or AlGaInP active layer 4 having a band gap energy smaller than that of the cladding layer, and a cladding layer 6 having a band gap energy larger than that of the active layer. The layer 2 has a first crystal plane that provides a quantum wire structure of the active layer and second crystal planes disposed at opposite sides of the first crystal plane. The first crystal plane forms a first angle smaller than a prescribed angle with a {100} surface of the substrate, and the second crystal plane forms a second angle larger than the first angle with the {100} surface.; The active layer 4 is grown so that the atoms are regularly ordered where the layer 4a is grown on the {100} surface and so that the atoms are disordered where the layer 4b is grown on a surface forming an angle theta 1 with the {100} surface.
公开日期	1997-06-04
申请日期	1994-07-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42057]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	AKIHIRO SHIMA. Semiconductor laser and method of producing the semiconductor laser. GB2280311B. 1997-06-04.

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