| Coupled laser diode arrangement | |
| HEINEN, JOCHEN; AMANN, MARKUS-CHRISTIAN | |
| 1988-05-03 | |
| 著作权人 | SIEMENS AKTIENGESELLSCHAFT, A CORP. OF GERMANY |
| 专利号 | US4742525 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Coupled laser diode arrangement |
| 英文摘要 | An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the middle layer at opposite sides thereof and directly across from each other so that the strip-shaped laser-active zones in each of the two-layer structures are positioned at a defined spacing directly across from each other and in symmetrical manner with respect to the middle layer. The middle layer is epitaxially deposited with a precisely dimensioned thickness relative to the two coupled laser diodes being employed. |
| 公开日期 | 1988-05-03 |
| 申请日期 | 1985-09-06 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42028]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SIEMENS AKTIENGESELLSCHAFT, A CORP. OF GERMANY |
| 推荐引用方式 GB/T 7714 | HEINEN, JOCHEN,AMANN, MARKUS-CHRISTIAN. Coupled laser diode arrangement. US4742525. 1988-05-03. |
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