Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser
AOKI, MASAHIRO
2010-07-20
著作权人LUMENTUM JAPAN, INC.
专利号US7760782
国家美国
文献子类授权发明
其他题名Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser
英文摘要The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are simultaneously realized. Also, the invention aims at realizing a laser light source excellent in economy as well by realizing output characteristics of a vertical cavity surface light emitting laser. A distributed Bragg reflector laser is constructed in the form of a semiconductor laser having a multilayer structure formed on a predetermined semiconductor substrate. The multilayer structure includes an active region for emitting a laser beam, and a distributed Bragg reflector layer. A length of the active region falls within the range of 10 to 100 μm, and a laser light beam is generated in accordance with ON/OFF of current injection to the active region.
公开日期2010-07-20
申请日期2006-06-23
状态授权
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/42004]  
专题半导体激光器专利数据库
作者单位LUMENTUM JAPAN, INC.
推荐引用方式
GB/T 7714
AOKI, MASAHIRO. Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser. US7760782. 2010-07-20.
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