QQ客服 官方微博 反馈留言

	Semiconductor laser diode and method of manufacturing the same
	HONG, SUNG UI; LEE, JIN HONG; KIM, JIN SOO; KWACK, HO SANG; OH, DAE KON
	2009-03-24
著作权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
专利号	US7508857
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser diode and method of manufacturing the same
英文摘要	Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.
公开日期	2009-03-24
申请日期	2005-11-02
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41990]
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	HONG, SUNG UI,LEE, JIN HONG,KIM, JIN SOO,et al. Semiconductor laser diode and method of manufacturing the same. US7508857. 2009-03-24.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。