Method of fabricating a semiconductor laser device | |
HOSOBA, HIROYUKI; SEKI, AKINORI; HATA, TOSHIO; KONDOU, MASAFUMI; SUYAMA, TAKAHIRO; MATSUI, SADAYOSHI | |
1994-01-12 | |
著作权人 | SHARP KABUSHIKI KAISHA |
专利号 | EP0452146B1 |
国家 | 欧洲专利局 |
文献子类 | 授权发明 |
其他题名 | Method of fabricating a semiconductor laser device |
英文摘要 | A semiconductor laser device is provided which includes a semiconductor substrate (1) and a multi-layered structure disposed on the substrate, the multi-layered structure containing an AlxGa1-xAs (0 y) active layer (3) for laser oscillation formed on the first cladding layer, an AlxGa1-xAs (0 y) active layer (3) for laser oscillation, an AlGaAs (0 < x < 1) second cladding layer (22), a GaAs buffer layer (4), an AluGa1-uAs (0 < u < 1) etching stopper layer (5), an AlzGa1-zAs (0 < z < 1, z < u) current blocking layer (61), and a GaAs protective layer; etching the protective layer and the current blocking layer to form a striped groove as a current injection path; removing the exposed portion of the etching stopper layer (5) on the bottom of the striped groove; removing the portion of the buffer layer (4) on the bottom of the striped groove and at least one part of the protective layer by a melt-back technique; and growing an AlxGa1-xAs (0 < x < 1) third cladding layer (23) so as to bury the striped groove therein and growing a GaAs contact layer (7) on the third cladding layer. |
公开日期 | 1994-01-12 |
申请日期 | 1991-04-12 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/41957] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | HOSOBA, HIROYUKI,SEKI, AKINORI,HATA, TOSHIO,et al. Method of fabricating a semiconductor laser device. EP0452146B1. 1994-01-12. |
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