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	赤外半導体レ-ザ
	鈴木 正敏; 久代 行俊; 宇高 勝之; 秋葉 重幸; 松島 裕一; 田中 英明
	1996-06-14
著作权人	国際電信電話株式会社
专利号	JP2529854B2
国家	日本
文献子类	授权发明
其他题名	赤外半導体レ-ザ
英文摘要	PURPOSE:To obtain an infrared semiconductor laser having a high inner quantum efficiency by making part of the optical waveguide layer an active region. CONSTITUTION:On a N-InP substrate 1, an InGaAsP optical waveguide layer 2 is stacked in which the electrical conductivity is varying from semi-insulation to P-type. Further, a P-InP upper clad layer 3 and a P-InGaAsP contact layer 4 are constructed thereon. Positive holes which have continuously been injected from the P-type InP layer 3 proceed to the boundary of the substrate 1, but they combine with electrons at the hetero junction plane and emit a light. The light emission wavelength is two times the wavelength of the forbidden band since the InGaAsP at the hetero interface is an intrinsic semiconductor. In this structure, the carrier injection efficiency is high, and by changing the composition of the intrinsic semiconductor InGaAsP, the oscillation wavelength can be changed from 2mum to about 3.35mum.
公开日期	1996-09-04
申请日期	1987-06-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41955]
专题	半导体激光器专利数据库
作者单位	国際電信電話株式会社
推荐引用方式 GB/T 7714	鈴木 正敏,久代 行俊,宇高 勝之,等. 赤外半導体レ-ザ. JP2529854B2. 1996-06-14.

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