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	Nonlinear optical transistor
	LOMASHEVICH, SVYATOSLAV A.
	1998-02-10
著作权人	SAMSUNG ELECTRONICS CO., LTD.
专利号	US5717225
国家	美国
文献子类	授权发明
其他题名	Nonlinear optical transistor
英文摘要	A nonlinear optical transistor comprises a pair of surface emitting semiconductor laser diodes, a phase modulator including a waveguide confined by a pair of first mirrors in the horizontal direction and located between the pair of surface emitting semiconductor laser diodes and a multiplicity of electrodes for controlling these elements. The transistor is characterized by its input optical signals for controlling the system; its high sensitivity; its capability to generate narrow, circularly symmetrical and single mode output signals; and its ability to carry out a multi-level processing of optical signals as well as computing operations and storage functions. These characteristics are obtained by introducing a pair of Fabry-Perot microresonators, each of the Fabry-Perot microresonators having a vertical optical axis, by utilizing a plurality of multilayer Bragg reflectors, wherein surface coatings are applied to the input faces to increase the reflection index to 0, the grating of the distributed Bragg reflectors being located above the phase modulator waveguide and the reference electrode being found on the bottom bases. The device has two input and two output optical contacts.
公开日期	1998-02-10
申请日期	1994-07-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41937]
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	LOMASHEVICH, SVYATOSLAV A.. Nonlinear optical transistor. US5717225. 1998-02-10.

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