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	Semiconductor laser with light modulator
	TAKEMI, MASAYOSHI
	1995-01-17
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5383216
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser with light modulator
英文摘要	An integrated semiconductor laser and light modulator includes a semiconductor substrate having a first surface, a semiconductor laser disposed on the first surface of the semiconductor substrate, an electric field absorption type light modulator passing and cutting off the light generated by the semiconductor laser, the semiconductor substrate including a groove opposite the modulator filled with a first semiconductor layer having a lattice constant smaller than that of the semiconductor substrate, having a surface coplanar with the first surface of the semiconductor substrate, and producing misfit dislocations at the growth interface, and a second semiconductor layer epitaxially grown on the first surface of the semiconductor substrate lattice matching with the semiconductor substrate. The electric field absorption type light modulator active layer is the part of the second semiconductor layer grown on the first semiconductor layer into which distortion is introduced by the dislocations, and the semiconductor laser is disposed on a different part of the first semiconductor layer. Therefore, the light generated in the semiconductor laser efficiently propagates into the light modulator.
公开日期	1995-01-17
申请日期	1993-11-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41930]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	TAKEMI, MASAYOSHI. Semiconductor laser with light modulator. US5383216. 1995-01-17.

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