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	分布帰還型半導体レ-ザ装置
	茅根 直樹; 辻 伸二; 藤崎 芳久; 柏田 泰利; 平尾 元尚
	1994-08-24
著作权人	株式会社日立製作所
专利号	JP1994066509B2
国家	日本
文献子类	授权发明
其他题名	分布帰還型半導体レ-ザ装置
英文摘要	PURPOSE:To obtain a distributed feedback type semiconductor laser stably oscillating in a single mode by dividing a diffraction grating into regions having different Bragg wavelengths and arranging each resion in a cascade in the direction of an optical axis. CONSTITUTION:An N type InP layer (a buffer layer) 2, an InGaAsP layer (an active layer) 3 and an InGaAsP layer (an optical guide layer) 4 are grown on an N type InP substrate 1 through a known liquid phase growth method in succession. The surface of the optical guide layer 4 is exposed through an interference exposure method to form a desired pattern having periodic irregularities, and irregularities 7, 8 having different periods in a region I and a region II are shaped. A P type InP clad layer 5 and a P type InGaAsP layer (a contact layer) 6 are grown on the irregularities 7, 8 in succession, and an N side electrode 9 consisting of Au-Sn is formed on the lower side of the substrate 1 and a P-side electrode 10 composed of Cr-Au on the upper side of the contact layer 6. According to such constitution, single longitudinal mode oscillation can be realized with excellent reproducibility without depending upon the variance of an element.
公开日期	1994-08-24
申请日期	1983-12-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41884]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	茅根 直樹,辻 伸二,藤崎 芳久,等. 分布帰還型半導体レ-ザ装置. JP1994066509B2. 1994-08-24.

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