Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration | |
AMERSFOORT, MARTIN; ZAH, CHUNG-EN | |
1998-09-08 | |
著作权人 | REMBRANDT COMMUNICATIONS, LP |
专利号 | US5805755 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration |
英文摘要 | An opto-electronic integrated circuit including an active ridge waveguide (60), for example, a semiconductor laser diode, and a passive buried heterostructure semiconductor waveguide (64). The two types of waveguides are chosen for their respective tasks so as to minimize the lasing wavelength dependencies arising from fabricational variations and to simultaneously reduce the allowable bending radius, thus reducing the chip size. The two waveguides are coupled by a transition structure (62) including a laterally undefined slab waveguide. A fabricational method is described that self-aligns the ridge and buried heterostructure waveguides so that the transition loss is negligible. The method can be integrated with the fabrication of a window facet (118', 118'') between an end of the ridge waveguide and the chip edge, which prevents unintended back reflections from the chip edge. |
公开日期 | 1998-09-08 |
申请日期 | 1996-06-17 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/41860] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | REMBRANDT COMMUNICATIONS, LP |
推荐引用方式 GB/T 7714 | AMERSFOORT, MARTIN,ZAH, CHUNG-EN. Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration. US5805755. 1998-09-08. |
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