QQ客服 官方微博 反馈留言

	Laser diode device and method of manufacturing laser diode device
	FUTAGAWA, NORIYUKI; NAKAJIMA, HIROSHI; YANASHIMA, KATSUNORI; KYONO, TAKASHI; ADACHI, MASAHIRO
	2014-11-18
著作权人	SONY CORPORATION
专利号	US8891568
国家	美国
文献子类	授权发明
其他题名	Laser diode device and method of manufacturing laser diode device
英文摘要	A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.
公开日期	2014-11-18
申请日期	2012-12-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41853]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	FUTAGAWA, NORIYUKI,NAKAJIMA, HIROSHI,YANASHIMA, KATSUNORI,et al. Laser diode device and method of manufacturing laser diode device. US8891568. 2014-11-18.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。