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	Refractive index control optical semiconductor device
	NIDO, MASAAKI; KIMURA, AKITAKA
	1995-06-13
著作权人	BENHOV GMBH, LLC
专利号	US5425042
国家	美国
文献子类	授权发明
其他题名	Refractive index control optical semiconductor device
英文摘要	A refractive index control optical semiconductor device includes a semiconductor p-n junction structure, and a refractive index control semiconductor layer. The semiconductor p-n junction structure outputs light with a forward current. The refractive index control semiconductor layer is formed on a semiconductor substrate, is stacked on the semiconductor p-n junction structure to constitute an optical waveguide, causes a refractive index change of light to occur by carrier injection, and includes a multi-quantum well structure formed by alternately stacking a semiconductor quantum well layer and a barrier layer having a bandgap larger than that of the semiconductor quantum well layer at a plurality of periods. The semiconductor quantum well layer has a lattice constant smaller than that of the semiconductor substrate. The thickness of the semiconductor quantum well layer is set such that a lowest heavy hole sub-band and a lowest light hole sub-band of the semiconductor quantum well layer have nearly the same energy at a GAMMA -point in a wave number space.
公开日期	1995-06-13
申请日期	1994-06-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41830]
专题	半导体激光器专利数据库
作者单位	BENHOV GMBH, LLC
推荐引用方式 GB/T 7714	NIDO, MASAAKI,KIMURA, AKITAKA. Refractive index control optical semiconductor device. US5425042. 1995-06-13.

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