| Selective growth of InP in device fabrication | |
| ROBERT, FRANK, KARLICEK; ROBERT, FRANK, KARLICEK, JR | |
| 1994-10-05 | |
| 著作权人 | AT&T CORP. |
| 专利号 | GB2253304B |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Selective growth of InP in device fabrication |
| 英文摘要 | A process for selectively depositing a series of indium phosphide layers 7 on a substrate comprises using a gas including an indium-organic gas such as an indium trialkyl, a phosphorus source such as phosphine and an organic halide such as trichloroethane. The layers form an isolation region or planarization for an InP laser 1-4. The organic halide decomposes to release halogen at about the same temperature that the indium-organic precursor decomposes. The laser comprises reactive ion etched mesa stripes coated with SiO2 on which, due to the use of the organic halide, layers 7 do not grow. The SiO2 layer is removed before growing InP and InGaAs layers of the laser structure. |
| 公开日期 | 1994-10-05 |
| 申请日期 | 1992-02-18 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41811]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | ROBERT, FRANK, KARLICEK,ROBERT, FRANK, KARLICEK, JR. Selective growth of InP in device fabrication. GB2253304B. 1994-10-05. |
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