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	Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure
	OH, SU HWAN; PARK, SAHNGGI; BAEK, YONGSOON; OH, KWANG-RYONG
	2011-04-05
著作权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
专利号	US7920322
国家	美国
文献子类	授权发明
其他题名	Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure
英文摘要	Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.
公开日期	2011-04-05
申请日期	2007-10-26
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41807]
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	OH, SU HWAN,PARK, SAHNGGI,BAEK, YONGSOON,et al. Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure. US7920322. 2011-04-05.

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