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	Method of etching patterns into epitaxial material
	PAKULSKI, GRZEGORZ J.; FINLAY, RICHARD J.
	2003-04-22
著作权人	OCLARO TECHNOLOGY LIMITED
专利号	US6551936
国家	美国
文献子类	授权发明
其他题名	Method of etching patterns into epitaxial material
英文摘要	An improved method for etching a pattern in a semiconductor material is based on the formation of an InP grating mask on the semiconductor material. The formation of the InP grating mask involves the formation of a multi-layered structure on the semiconductor material with an etch-stop layer between two InP layers. A photoresist grating mask corresponding to the pattern to be etched in the semiconductor material is then formed on the top InP layer. Subsequently, a non-selective etch is used to penetrate the top InP layer, the etch-stop layer, and the lower InP layer. A suitable stripping solvent is then used to remove the photoresist followed by a selective etch to clear the remaining exposed InP material, remove contaminated material and to expose the underlying semiconductor material in accordance with the pattern to be etched. Additional masking beyond the InP mask is, therefore, not required. The exposed semiconductor material is then etched such that the pattern is transferred to the semiconductor material.
公开日期	2003-04-22
申请日期	2000-12-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41775]
专题	半导体激光器专利数据库
作者单位	OCLARO TECHNOLOGY LIMITED
推荐引用方式 GB/T 7714	PAKULSKI, GRZEGORZ J.,FINLAY, RICHARD J.. Method of etching patterns into epitaxial material. US6551936. 2003-04-22.

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