Modulated cap thin p-clad semiconductor laser | |
ZORY, JR., PETER S. | |
2000-12-26 | |
著作权人 | UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED |
专利号 | US6167072 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Modulated cap thin p-clad semiconductor laser |
英文摘要 | A semiconductor laser structure for use having a laser substructure so constructed and arranged to have an active region in close proximity to the top surface region and separated therefrom by a separation region, the separation region having a lower refractive index than the top surface region and the active region. |
公开日期 | 2000-12-26 |
申请日期 | 1998-06-05 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/41711] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED |
推荐引用方式 GB/T 7714 | ZORY, JR., PETER S.. Modulated cap thin p-clad semiconductor laser. US6167072. 2000-12-26. |
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