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	埋め込み型半導体レーザおよびその製造方法
	井上 武史; 山口 朗; 入田 丈司
	1999-04-16
著作权人	光計測技術開発株式会社
专利号	JP2913327B2
国家	日本
文献子类	授权发明
其他题名	埋め込み型半導体レーザおよびその製造方法
英文摘要	PURPOSE:To form a window structure and a buried layer without allowing an active layer to come into contact with the atmosphere by using the plane of [110] as a growth stop plane. CONSTITUTION:After the formation of an n-type clad layer 12 and an n-type guide layer 13 in a [100] n-type GaAs substrate 11, a diffraction grating 14 is formed on the n-type guide layer 13. Then, a mesa stripe is formed. In succession, an n-type buffer layer 15, an active layer 16, a p-type clad first layer 17, an n-type block layer 18, a p-type clad second layer 19, and a p-type cap layer 20 are grown in this order. When an attempt is made to select a condition where the n-type buffer layer 15, the active layer 16, and the p-type clad first layer 17 are required to form the plane of [110] as the growth stop plane, a roof type structure is obtained so that the active layer 16 may be separated from the top of the mesa and from the side of the mesa. After the mesa is covered with the plane of [110], the n-type block layer 18 is formed in such a manner that it may surround the mesa. A p-type electrode 21 is installed on a p-type cap layer 20 where an n-type electrode 22 is installed on the rear side of the substrate 1 This construction makes it possible to manufacture a buried type semiconductor laser with a window structure without bringing the active layer in contact with the atmosphere.
公开日期	1999-06-28
申请日期	1990-07-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41665]
专题	半导体激光器专利数据库
作者单位	光計測技術開発株式会社
推荐引用方式 GB/T 7714	井上 武史,山口 朗,入田 丈司. 埋め込み型半導体レーザおよびその製造方法. JP2913327B2. 1999-04-16.

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