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	Production method of III nitride compound semiconductor and III nitride compound semiconductor element
	KOIKE, MASAYOSHI; TEZEN, YUTA; YAMASHITA, HIROSHI; NAGAI, SEIJI; HIRAMATSU, TOSHIO
	2006-11-28
著作权人	TOYODA GOSEI CO., LTD.
专利号	US7141444
国家	美国
文献子类	授权发明
其他题名	Production method of III nitride compound semiconductor and III nitride compound semiconductor element
英文摘要	A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/mesa such that layer different from the first Group III nitride compound semiconductor layer 31 is exposed at the bottom portion of the trench. Thus, a second Group III nitride compound layer 32 can be epitaxially grown, laterally, with a top surface of the mesa and a sidewall/sidewalls of the trench serving as a nucleus, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer 31 can be prevented in the upper portion of the second Group III nitride compound semiconductor 32 that is formed through lateral epitaxial growth. Etching may be performed until a cavity portion is provided in the substrate. The layer serving as a nucleus of ELO may be doped with indium (In) having an atomic radius greater than that of gallium (Ga) serving as a predominant element. The first semiconductor layer may be a multi-component layer containing a plurality of numbers of repetitions of a unit of a buffer layer and a single-crystal layer.
公开日期	2006-11-28
申请日期	2001-03-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/40166]
专题	半导体激光器专利数据库
作者单位	TOYODA GOSEI CO., LTD.
推荐引用方式 GB/T 7714	KOIKE, MASAYOSHI,TEZEN, YUTA,YAMASHITA, HIROSHI,et al. Production method of III nitride compound semiconductor and III nitride compound semiconductor element. US7141444. 2006-11-28.

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