Hetero-integration of dissimilar semiconductor materials | |
XIE, YA-HONG | |
2002-12-17 | |
著作权人 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
专利号 | US6495385 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Hetero-integration of dissimilar semiconductor materials |
英文摘要 | A method, structure and article of manufacture related to hetero-integration of dissimilar semiconductor materials. A mask is created on a semiconductor substrate, wherein the mask includes one or more openings, and each of the openings includes one or more overhangs. The overhangs cover a hetero-epitaxial interface region between a film expitaxially grown on the substrate and the substrate itself, thereby preventing a "line-of-sight" view along a surface norm of the substrate in the hetero-epitaxial interface region between the epitaxial film and the substrate. There is only one hetero-epitaxial interface region for each of the openings, which results in only one epitaxial growth front coalescence per opening, thereby reducing the number of highly defective regions from epitaxial growth front coalescence by a factor of two. |
公开日期 | 2002-12-17 |
申请日期 | 2000-08-04 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/40157] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
推荐引用方式 GB/T 7714 | XIE, YA-HONG. Hetero-integration of dissimilar semiconductor materials. US6495385. 2002-12-17. |
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