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	Quantum thin line producing method and semiconductor device
	FUKUMI, MASAYUKI; FUKUSHIMA, YASUMORI
	2001-09-25
著作权人	SHARP KABUSHIKI KAISHA
专利号	US6294399
国家	美国
文献子类	授权发明
其他题名	Quantum thin line producing method and semiconductor device
英文摘要	A Si protruding portion is formed on a Si substrate by opportunely using the general film forming technique, photolithographic technique and etching technique. A second oxide film is formed to fill up a space between Si protruding portions, and the surface is flattened by the CMP method or the like. Then, the second oxide film is subjected to anisotropic etching to form a Si exposed portion at the top of the Si protruding portion. A Si thin line is made to grow in this Si exposed portion, and then a third oxide film for isolating the Si thin line from the Si substrate is formed through oxidation. A quantum thin line is thus formed at low cost without using any special technique of SOI or the like. Furthermore, the substrate surface is flattened, allowing the formation of a single electron device or a quantum effect device to be easy. The quantum thin line is isolated from the Si substrate by the third oxide film, completely confining the electron. With this arrangement, a quantum thin line that has good substrate surface flatness and is able to form a complete electron confining region is formed by using a semiconductor substrate of a Si substrate or the like.
公开日期	2001-09-25
申请日期	2000-01-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/40152]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	FUKUMI, MASAYUKI,FUKUSHIMA, YASUMORI. Quantum thin line producing method and semiconductor device. US6294399. 2001-09-25.

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